发明申请
US20050271955A1 System and method for improvement of alignment and overlay for microlithography
有权
用于微光刻的对准和覆盖的改进的系统和方法
- 专利标题： System and method for improvement of alignment and overlay for microlithography
- 专利标题（中）： 用于微光刻的对准和覆盖的改进的系统和方法
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申请号： US11143076申请日： 2005-06-02
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公开(公告)号： US20050271955A1公开(公告)日： 2005-12-08
- 发明人: Anshuman Cherala , Sidlgata Sreenivasan , Kranthimitra Adusumilli
- 申请人： Anshuman Cherala , Sidlgata Sreenivasan , Kranthimitra Adusumilli
- 专利权人： Board of Regents, The University of Texas System
- 当前专利权人： Board of Regents, The University of Texas System
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; G03F9/00
摘要：
The present invention provides a method for determining the forces to be applied to a substrate in order to deform the same and correct for overlay misalignment.
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