发明申请
US20050272254A1 Method of depositing low resistivity barrier layers for copper interconnects
审中-公开
沉积用于铜互连的低电阻阻挡层的方法
- 专利标题： Method of depositing low resistivity barrier layers for copper interconnects
- 专利标题（中）： 沉积用于铜互连的低电阻阻挡层的方法
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申请号： US11184404申请日： 2005-07-18
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公开(公告)号： US20050272254A1公开(公告)日： 2005-12-08
- 发明人: Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen Chen , Barry Chin , Gene Kohara
- 申请人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen Chen , Barry Chin , Gene Kohara
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 优先权： TW87116315 19980930; WOPCT/US98/23355 19981102; EP98956499.2 19981102; JP2000-515925 19981102; KR7006556/00 19981102; TW88115694 19990910; WOPCT/US99/21739 19990921; EP99949747.2 19990911; JP200-574309 19990921; KR7003750/01 19990921; TW90128764 20011120
- 主分类号： C23C14/06
- IPC分类号： C23C14/06 ; C23C14/16 ; C23C14/32 ; H01L21/285 ; H01L21/44 ; H01L21/4763 ; H01L21/768
摘要：
We have discovered a method of providing a thin approximately from about 2 Å to about 100 Å thick TaN seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaN seed layer. Further, the TaN seed layer exhibits low resistivity, in the range of 30 μΩ cm and can be used as a low resistivity barrier layer in the absence of an alpha tantalum layer. In one embodiment of the method, a TaN film is altered on its surface form the TaN seed layer. In another embodiment of the method, a Ta film is altered on its surface to form the TaN seed layer.
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