发明申请
US20050272260A1 Novel device structure having enhanced surface adhesion and failure mode analysis
有权
具有增强的表面粘附性和故障模式分析的新型器件结构
- 专利标题: Novel device structure having enhanced surface adhesion and failure mode analysis
- 专利标题(中): 具有增强的表面粘附性和故障模式分析的新型器件结构
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申请号: US10861149申请日: 2004-06-04
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公开(公告)号: US20050272260A1公开(公告)日: 2005-12-08
- 发明人: Hway Lin , Yi-Lung Cheng , Chao-Hsiung Wang
- 申请人: Hway Lin , Yi-Lung Cheng , Chao-Hsiung Wang
- 专利权人: Taiwan Semiconductor Manufacturing Co.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co.
- 主分类号: H01L21/44
- IPC分类号: H01L21/44 ; H01L21/768
摘要:
A substrate is provided having semiconductor device structures formed in and on the substrate. The semiconductor device structures comprise conductor layers embedded in openings in dielectric layers having a dielectric constant of less than 4.5. The dielectric layer has a roughness between the dielectric and the conductor wherein the roughness of the dielectric layer divided by the thickness of a barrier layer underlying the conductor layer is 0 to 1. The integrated circuit structure is prepared for failure analysis by removing the low dielectric constant dielectric layers and exposing the conductor layers for further failure analysis by optical examination or scanning electron microscope (SEM).