发明申请
- 专利标题： Semiconductor device and method for manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11198541申请日： 2005-08-05
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公开(公告)号： US20050272272A1公开(公告)日： 2005-12-08
- 发明人: Jae-Hyun Yeo , Sung-Tae Kim , Young-Sun Kim , In-Sung Park , Seok-Jun Won , Yun-Jung Lee , Ki-Vin Im , Ki-Yeon Park
- 申请人： Jae-Hyun Yeo , Sung-Tae Kim , Young-Sun Kim , In-Sung Park , Seok-Jun Won , Yun-Jung Lee , Ki-Vin Im , Ki-Yeon Park
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR2002-48404 20020816
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01L21/02 ; H01L21/31 ; H01L21/314 ; H01L21/316 ; H01L21/469 ; H01L21/8242 ; H01L27/108 ; H01L29/76 ; H01L29/94 ; H01L31/119
摘要：
A semiconductor device and a method for forming the same. A dielectric layer is formed on a semiconductor substrate or on a lower electrode of a capacitor. Vacuum annealing is performed on the dielectric layer. Thus, impurities remaining in the dielectric layer can be effectively removed, and the dielectric layer can be densified. As a result, the electrical characteristics of the semiconductor device are improved. For example, the leakage current characteristics of the dielectric layer are improved and capacitance is increased.