发明申请
- 专利标题: Integration of titanium and titanium nitride layers
- 专利标题(中): 钛和氮化钛层的整合
-
申请号: US11151699申请日: 2005-06-13
-
公开(公告)号: US20050277290A1公开(公告)日: 2005-12-15
- 发明人: Michael Yang , Toshio Itoh , Ming Xi
- 申请人: Michael Yang , Toshio Itoh , Ming Xi
- 专利权人: APPLIED MATERIALS, INC.
- 当前专利权人: APPLIED MATERIALS, INC.
- 主分类号: C23C16/06
- IPC分类号: C23C16/06 ; C23C16/34 ; C23C16/42 ; C23C16/44 ; C23C16/452 ; C23C16/455 ; C23C16/515 ; H01J37/32 ; H01L21/285 ; H01L21/312 ; H01L21/768 ; H01L21/4763 ; H01L21/44
摘要:
Embodiments of the invention generally relate to an apparatus and method of integration of titanium and titanium nitride layers. One embodiment includes providing one or more cycles of a first set of compounds such as a titanium precursor and a reductant, providing one or more cycles of a second set of compounds such as the titanium precursor and a silicon precursor and providing one or more cycles of a third set of compounds such as the titanium precursor and a nitrogen precursor. Another embodiment includes depositing a titanium layer on a substrate, depositing a passivation layer containing titanium silicide, titanium silicon nitride or combinations thereof over the titanium layer and subsequently depositing a titanium nitride layer over the passivation layer. Still another embodiment comprises depositing a titanium layer on a substrate, soaking the titanium layer with a silicon precursor and subsequently depositing a titanium nitride layer thereon.
公开/授权文献
- US07094685B2 Integration of titanium and titanium nitride layers 公开/授权日:2006-08-22