发明申请
US20060001119A1 III-V semiconductor nanocrystal complexes and methods of making same
有权
III-V族半导体纳米晶体复合物及其制备方法
- 专利标题： III-V semiconductor nanocrystal complexes and methods of making same
- 专利标题（中）： III-V族半导体纳米晶体复合物及其制备方法
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申请号： US11125129申请日： 2005-05-10
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公开(公告)号： US20060001119A1公开(公告)日： 2006-01-05
- 发明人: Wei Liu , Adam Peng , Daniel Landry
- 申请人： Wei Liu , Adam Peng , Daniel Landry
- 申请人地址： US NY Troy
- 专利权人： Evident Technologies, Inc.
- 当前专利权人： Evident Technologies, Inc.
- 当前专利权人地址： US NY Troy
- 主分类号： H01L31/00
- IPC分类号： H01L31/00 ; H01L21/00
摘要：
A semiconductor nanocrystal complex that is stable and has high luminescent quantum yield. The semiconductor nanocrystal complex has a semiconductor nanocrystal core of a III-V semiconductor nanocrystal material. A method of making a semiconductor nanocrystal complex is also provided. The method includes synthesizing a semiconductor nanocrystal core of a III-V semiconductor nanocrystal material, and forming a metal layer on the semiconductor nanocrystal core after synthesis of the semiconductor nanocrystal core.
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