发明申请
- 专利标题： Method for producing an electromagnetic radiation-emitting semiconductor chip and a corresponding electromagnetic radiation-emitting semiconductor chip
- 专利标题（中）： 用于制造电磁辐射发射半导体芯片和相应的电磁辐射发射半导体芯片的方法
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申请号： US10524186申请日： 2003-08-21
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公开(公告)号： US20060003467A1公开(公告)日： 2006-01-05
- 发明人: Christian Karnutsch , Peter Stauss , Klaus Streubei
- 申请人： Christian Karnutsch , Peter Stauss , Klaus Streubei
- 申请人地址： DE Regensburg
- 专利权人： Osram Opto Semiconductors GmbH
- 当前专利权人： Osram Opto Semiconductors GmbH
- 当前专利权人地址： DE Regensburg
- 优先权： DE10239045.2 20020826
- 国际申请： PCT/DE03/02786 WO 20030821
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
In a method of fabricating a radiation-emitting semiconductor chip based on AlGaInP, comprising the method steps of preparing a substrate, applying to the substrate a semiconductor layer sequence comprising a photon-emitting active layer, and applying a transparent decoupling layer comprising(Gax(InyAl1-y)1-xP wherein 0.8≦x and 0≦y≦1, it is provided according to the invention that the substrate is made of germanium and that the transparent decoupling layer is applied at low temperature.
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