发明申请
US20060003509A1 Method of forming a gate structure for a semiconductor device and method of forming a cell gate structure for a non-volatile memory device
有权
形成用于半导体器件的栅极结构的方法和形成用于非易失性存储器件的单元栅极结构的方法
- 专利标题: Method of forming a gate structure for a semiconductor device and method of forming a cell gate structure for a non-volatile memory device
- 专利标题(中): 形成用于半导体器件的栅极结构的方法和形成用于非易失性存储器件的单元栅极结构的方法
-
申请号: US11175569申请日: 2005-07-05
-
公开(公告)号: US20060003509A1公开(公告)日: 2006-01-05
- 发明人: Woong Lee , Young-Sub You , Hun-Hyeoung Leam , Yong-Woo Hyung , Jai-Dong Lee , Ki-Su Na , Jung-Hwan Kim
- 申请人: Woong Lee , Young-Sub You , Hun-Hyeoung Leam , Yong-Woo Hyung , Jai-Dong Lee , Ki-Su Na , Jung-Hwan Kim
- 优先权: KR2004-51880 20040705
- 主分类号: H01L21/76
- IPC分类号: H01L21/76 ; H01L21/8234 ; H01L21/336
摘要:
In an embodiment, a method of forming a gate structure for a semiconductor device includes forming a preliminary gate structure on a semiconductor substrate. The preliminary gate structure includes a gate oxide pattern and a conductive pattern sequentially stacked on the substrate. Then, a re-oxidation process is performed to the substrate having the preliminary gate structure using an oxygen radical including at least one oxygen atom, so that an oxide layer is formed on a surface of the substrate and sidewalls of the preliminary gate structure to form the gate structure for a semiconductor device. The thickness of the gate oxide pattern is prevented from increasing, and the quality of the oxide layer is improved.