- 专利标题： Methods for neutralizing holes in tunnel oxides of floating-gate memory cells and devices
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申请号： US11217952申请日： 2005-09-01
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公开(公告)号： US20060007749A1公开(公告)日： 2006-01-12
- 发明人: Andrei Mihnea , Chun Chen
- 申请人： Andrei Mihnea , Chun Chen
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
Methods for neutralizing holes in tunnel oxides of floating-gate memory cells and devices using a decrease in magnitude of a source voltage of a first polarity to increase the magnitude of a control gate voltage of a second polarity.
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