发明申请
- 专利标题: Dual gated finfet gain cell
- 专利标题(中): 双门控finfet增益单元
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申请号: US11221118申请日: 2005-09-07
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公开(公告)号: US20060008927A1公开(公告)日: 2006-01-12
- 发明人: Toshiharu Furukawa , Mark Hakey , David Horak , Charles Koburger , Mark Masters , Peter Mitchell
- 申请人: Toshiharu Furukawa , Mark Hakey , David Horak , Charles Koburger , Mark Masters , Peter Mitchell
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A memory gain cell for a memory circuit, a memory circuit formed from multiple memory gain cells, and methods of fabricating such memory gain cells and memory circuits. The memory gain cell includes a storage device capable of holding a stored electrical charge, a write device, and a read device. The read device includes a fin of semiconducting material, electrically-isolated first and second gate electrodes flanking the fin, and a source and drain formed in the fin adjacent to the first and the second gate electrodes. The first gate electrode is electrically coupled with the storage device. The first and second gate electrodes are operative for gating a region of the fin defined between the source and the drain to thereby regulate a current flowing from the source to the drain. When gated, the magnitude of the current is dependent upon the electrical charge stored by the storage device.
公开/授权文献
- US07566613B2 Method of forming a dual gated FinFET gain cell 公开/授权日:2009-07-28