发明申请
- 专利标题： Atomic layer deposition of interpoly oxides in a non-volatile memory device
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申请号： US11197562申请日： 2005-08-04
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公开(公告)号： US20060008997A1公开(公告)日： 2006-01-12
- 发明人: Chuck Jang , Zhong Dong , Vei-Han Chan , Ching-Hwa Chen
- 申请人： Chuck Jang , Zhong Dong , Vei-Han Chan , Ching-Hwa Chen
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
Aluminum oxide is deposited by atomic layer deposition to form a high-k dielectric for the interpoly dielectric layer of a non-volatile memory device. The increased capacitive coupling can allow a thicker oxide layer to be used between the floating gate and the control gate, resulting in improved reliability and longer lifetime of the memory cells fabricated according to this invention.
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