发明申请
US20060009017A1 Method of crystallizing semiconductor film and method of manufacturing display device
审中-公开
结晶半导体膜的方法和制造显示装置的方法
- 专利标题： Method of crystallizing semiconductor film and method of manufacturing display device
- 专利标题（中）： 结晶半导体膜的方法和制造显示装置的方法
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申请号： US11155959申请日： 2005-06-17
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公开(公告)号： US20060009017A1公开(公告)日： 2006-01-12
- 发明人: Shigeru Sembommatsu , Shuhei Yamamoto , Mitsuru Suginoya , Hideki Matsumura , Atsushi Masuda
- 申请人： Shigeru Sembommatsu , Shuhei Yamamoto , Mitsuru Suginoya , Hideki Matsumura , Atsushi Masuda
- 优先权： JP2004-201382 20040708
- 主分类号： C23C16/24
- IPC分类号： C23C16/24 ; H01L21/20 ; H01L21/36
摘要：
Conventional methods of crystallizing a semiconductor film through scanning with a pulse laser have had a problem in that variation in particle diameter or shape of a crystal grain causes variation in characteristics of a thin film transistor, which lowers display quality of a liquid crystal display. In view of this, in a method of crystallizing a semiconductor film according to the present invention, after a step of performing scanning with a first pulse laser, scanning with a second pulse laser, which has a higher energy density than that of the first pulse laser, is performed in a substantially orthogonal direction to a traveling direction of scanning with the first pulse laser. With this method, the semiconductor film can be crystallized uniformly.
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