发明申请
- 专利标题： Small grain size, conformal aluminum interconnects and method for their formation
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申请号： US11230773申请日： 2005-09-20
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公开(公告)号： US20060014386A1公开(公告)日： 2006-01-19
- 发明人: Wing-Cheong Lai , Gurtej Sandhu
- 申请人： Wing-Cheong Lai , Gurtej Sandhu
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mixed grain orientation. Finally, an aluminum film is formed on the second layer of titanium nitride. Optionally, a titanium silicide layer is formed on the semiconductor structure prior to the step of forming the first layer of titanium nitride. Interconnects formed according to the invention have polycrystalline aluminum films with grain sizes of approximately less than 0.25 microns.
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