发明申请
- 专利标题： Process for manufacturing an SOI wafer by annealing and oxidation of buried channels
-
申请号： US10327702申请日： 2002-12-20
-
公开(公告)号： US20060017131A9公开(公告)日： 2006-01-26
- 发明人: Flavio Villa , Gabriele Barlocchi , Pietro Corona
- 申请人： Flavio Villa , Gabriele Barlocchi , Pietro Corona
- 专利权人： STMicroelectronics S.r.I.
- 当前专利权人： STMicroelectronics S.r.I.
- 优先权： EP01830820.5 20011228
- 主分类号： H01L29/00
- IPC分类号： H01L29/00
摘要：
A process for manufacturing an SOI wafer, including the steps of: forming, in a wafer of semiconductor material, cavities delimiting structures of semiconductor material; thinning out the structures through a thermal process; and completely oxidizing the structures.