发明申请
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
-
申请号： US11183820申请日： 2005-07-19
-
公开(公告)号： US20060022224A1公开(公告)日： 2006-02-02
- 发明人: Masayuki Hiroi
- 申请人： Masayuki Hiroi
- 申请人地址： JP KAWASAKI 211-86668
- 专利权人： NEC ELECTRONICS CORPORATION
- 当前专利权人： NEC ELECTRONICS CORPORATION
- 当前专利权人地址： JP KAWASAKI 211-86668
- 优先权： JP2004-220073 20040728
- 主分类号： H01L29/768
- IPC分类号： H01L29/768
摘要：
The semiconductor device 100 includes a multilayer wiring structure formed on the semiconductor substrate. The multilayer wiring structure includes at least a first inter layer dielectric film 120 in which interconnects 124 are formed, and at least a second inter layer dielectric film 122 in which vias 126 are formed. The multilayer wiring structure includes a circuit region 110 in which the interconnects 124 and the vias 126 are formed, a seal ring region 112 formed around the circuit region 110 and in which seal rings surrounding the circuit region 110 in order to seal the circuit region 110 are formed, and a peripheral region 114 formed around the seal ring region 112. The semiconductor device 100 further includes dummy vias 136 formed of a metal material, formed in the second interlayer dielectric film 122 at the peripheral region 114.
公开/授权文献
- US07294932B2 Semiconductor device 公开/授权日：2007-11-13
信息查询
IPC分类:
