发明申请
- 专利标题： Methods of forming a P-well in an integrated circuit device
- 专利标题（中）： 在集成电路器件中形成P阱的方法
-
申请号： US10899596申请日： 2004-07-27
-
公开(公告)号： US20060024927A1公开(公告)日： 2006-02-02
- 发明人: Ranadeep Dutta , Frank Thiel
- 申请人： Ranadeep Dutta , Frank Thiel
- 主分类号： H01L21/425
- IPC分类号： H01L21/425
摘要：
The present invention is generally directed to a method of forming a p-well in an integrated circuit device. In one illustrative embodiment, the method comprises forming a first layer of epitaxial material above an active layer of a substrate, forming a first doped region in the first layer of epitaxial material, forming a second layer of epitaxial material above the first layer of epitaxial material, forming a second doped region in the second layer of epitaxial material, and performing at least one heat treating process.
公开/授权文献
- US07273776B2 Methods of forming a P-well in an integrated circuit device 公开/授权日：2007-09-25