- 专利标题： Base material cutting method, base material cutting apparatus, ingot cutting method, ingot cutting apparatus and wafer producing method
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申请号： US11222548申请日： 2005-09-08
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公开(公告)号： US20060027531A1公开(公告)日： 2006-02-09
- 发明人: Nobuo Kawase , Masakatsu Ohta , Nobuyoshi Tanaka
- 申请人： Nobuo Kawase , Masakatsu Ohta , Nobuyoshi Tanaka
- 优先权： JP2001-205315 20010705; JP2001-205316 20010705
- 主分类号： C23F1/00
- IPC分类号： C23F1/00 ; B23K26/16 ; B44C1/22 ; B23K26/14
摘要：
This invention discloses an ingot cutting apparatus, wherein a crystalline ingot is positioned within an etching gas and a component of the etching gas is excited by illumination of light from a light source onto the crystalline ingot, thereby making a component of the etching gas react chemically with the component of the crystalline ingot and volatilizing the component of the crystalline ingot to cut the crystalline ingot and obtain wafers and wherein light from a light source is guided to the crystalline ingot via a sheet-like, bar-like, or fiber-like optical wave guide.
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