发明申请
- 专利标题: Method for processing base
- 专利标题(中): 基地处理方法
-
申请号: US11196487申请日: 2005-08-04
-
公开(公告)号: US20060030071A1公开(公告)日: 2006-02-09
- 发明人: Masataka Mizukoshi , Nobuhiro Imaizumi , Yoshikatsu Ishizuki
- 申请人: Masataka Mizukoshi , Nobuhiro Imaizumi , Yoshikatsu Ishizuki
- 申请人地址: JP Kawasaki
- 专利权人: FUJITSU LIMITED
- 当前专利权人: FUJITSU LIMITED
- 当前专利权人地址: JP Kawasaki
- 优先权: JP2004-229921 20040805; JP2005-159364 20050531
- 主分类号: H01L21/50
- IPC分类号: H01L21/50 ; H01L21/48 ; H01L21/44
摘要:
The present invention realizes a semiconductor device of high reliability which allows metal terminals which have a uniform height, are flat and smooth to be formed under low load and at low costs and to be mounted with low damage. The electrodes 5 and the insulating film 6 are both formed of materials having the property that they are solid and do not exhibit the adhesiveness at room temperature and exhibit the adhesiveness at a temperature not lower than a first temperature and cure at a temperature not lower than a second temperature higher than the first temperature. The surfaces of the electrodes 5 and the insulating film 6 of a semiconductor chip 1a are planarized in continuously flat with a hard cutting tool, as of diamond or others.
公开/授权文献
信息查询
IPC分类: