发明申请
US20060030098A1 Method of forming an oxide layer on a compound semiconductor structure
有权
在化合物半导体结构上形成氧化物层的方法
- 专利标题： Method of forming an oxide layer on a compound semiconductor structure
- 专利标题（中）： 在化合物半导体结构上形成氧化物层的方法
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申请号： US11239749申请日： 2005-09-30
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公开(公告)号： US20060030098A1公开(公告)日： 2006-02-09
- 发明人: Ravindranath Droopad , Matthias Passlack
- 申请人： Ravindranath Droopad , Matthias Passlack
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
A method of forming a dielectric layer structure on a supporting semiconductor structure having a first surface comprises providing a first beam of oxide; depositing a first layer of oxide on the first surface of the supporting semiconductor structure using the first beam of oxide, wherein the first layer of oxide has a second surface; terminating the first beam of oxide, and concurrently providing a second beam of oxide, a beam of metal and a beam of oxygen, wherein the first and second beams of oxide are separate and distinct beams of oxide; and depositing a second layer of oxide on the second surface simultaneously using the second beam of oxide, the beam of metal, and the beam of oxygen.
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