发明申请
- 专利标题: Level shift circuit
- 专利标题(中): 电平移位电路
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申请号: US11261518申请日: 2005-10-31
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公开(公告)号: US20060033550A1公开(公告)日: 2006-02-16
- 发明人: Tomoya Ishikawa , Hirofumi Nakagawa
- 申请人: Tomoya Ishikawa , Hirofumi Nakagawa
- 申请人地址: JP Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JP Osaka
- 优先权: JP2003-137124 20030515
- 主分类号: H03L5/00
- IPC分类号: H03L5/00
摘要:
To a level shift basic circuit having a CMOS configuration and composed of four transistors M1 through M4, a control circuit for preventing feed-through current through the transistors is added. Transitions of complementary data inputs Vin1 and Vin2 are made in a period in which n-MOS transistors M7 and M8 for control are turned OFF by changing a control input VS1 to an L level (switch-off period). In this switch-off period, each source of the n-MOS transistors M1 and M2 is disconnected from VSS. In addition, in the switch-off period, a control input VS2 is changed to an L level, thereby turning ON p-MOS transistors M5 and M6 for control. In a period in which the control p-MOS transistors M5 and M6 are ON, data outputs Vout1 and Vout2 are both precharged to VDD (precharge period).
公开/授权文献
- US07176741B2 Level shift circuit 公开/授权日:2007-02-13