发明申请
US20060035469A1 Methods for forming an undercut region and electronic devices incorporating the same
有权
形成底切区域的方法和包含该切削区域的电子装置
- 专利标题： Methods for forming an undercut region and electronic devices incorporating the same
- 专利标题（中）： 形成底切区域的方法和包含该切削区域的电子装置
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申请号： US10915578申请日： 2004-08-10
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公开(公告)号： US20060035469A1公开(公告)日： 2006-02-16
- 发明人: Nugent Truong , Charles MacPherson
- 申请人： Nugent Truong , Charles MacPherson
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
An electronic device having a substrate structure having an undercut region is provided and further included is a method for forming an undercut region of a substrate structure. The method includes forming a patterned protective layer over a first electrode. The method also includes forming the substrate structure over the patterned protective layer. An opening within the substrate structure overlies an exposed portion of the substrate structure. The method further includes removing the exposed portion of the patterned protective layer, thereby exposing a portion of the first electrode and forming an undercut region of the substrate structure. The method still further includes depositing a liquid over the first electrode after removing the exposed portion of the patterned protective layer, and solidifying the liquid to form a solid layer.