发明申请
US20060035797A1 Semiconductor substrate cleaning liquid and semiconductor substrate cleaning process
审中-公开
半导体衬底清洗液和半导体衬底清洗工艺
- 专利标题： Semiconductor substrate cleaning liquid and semiconductor substrate cleaning process
- 专利标题（中）： 半导体衬底清洗液和半导体衬底清洗工艺
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申请号： US11201910申请日： 2005-08-10
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公开(公告)号： US20060035797A1公开(公告)日： 2006-02-16
- 发明人: Hiroshi Tomita , Yuji Yamada , Hiroaki Yamada , Norio Ishikawa , Yumiko Abe
- 申请人： Hiroshi Tomita , Yuji Yamada , Hiroaki Yamada , Norio Ishikawa , Yumiko Abe
- 申请人地址： JP Tokyo JP Tokyo
- 专利权人： kabushiki kaisha Toshiba,Kanto Kagaku Kabushiki Kaisha
- 当前专利权人： kabushiki kaisha Toshiba,Kanto Kagaku Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo JP Tokyo
- 优先权： JP2004-233670 20040810
- 主分类号： C23G1/00
- IPC分类号： C23G1/00 ; B08B3/00
摘要：
A semiconductor substrate cleaning liquid composition is provided that includes one or more types selected from the group consisting of a compound having at least two sulfonic acid groups per molecule, phytic acid, and a condensed phosphoric acid compound; an inorganic acid; and water. There is also provided a process for cleaning a semiconductor substrate that includes a first step of cleaning the semiconductor substrate using the semiconductor substrate cleaning liquid composition and, subsequent to the first step, a second step of cleaning the semiconductor substrate with pure water, ozone water formed by dissolving ozone gas in pure water, or aqueous hydrogen peroxide.