Invention Application
- Patent Title: Evaluation method of fine pattern feature, its equipment, and method of semiconductor device fabrication
- Patent Title (中): 精细图案特征,其设备和半导体器件制造方法的评估方法
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Application No.: US11185852Application Date: 2005-07-21
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Publication No.: US20060036409A1Publication Date: 2006-02-16
- Inventor: Atsuko Yamaguchi , Hiroshi Fukuda , Hiroki Kawada , Tatsuya Maeda
- Applicant: Atsuko Yamaguchi , Hiroshi Fukuda , Hiroki Kawada , Tatsuya Maeda
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Priority: JPJP2004-222737 20040730
- Main IPC: G06F17/00
- IPC: G06F17/00

Abstract:
Equipment extracts components of spatial frequency that need to be evaluated in manufacturing a device or in analyzing a material or process out of edge roughness on fine line patterns and displays them as indexes. The equipment acquires data of edge roughness over a sufficiently long area, integrates a components corresponding to a spatial frequency region being set on a power spectrum by the operator, and displays them on a length measuring SEM. Alternatively, the equipment divides the edge roughness data of the sufficiently long area, computes long-period roughness and short-period roughness that correspond to an arbitrary inspection area by performing statistical processing and fitting based on theoretical calculation, and displays them on the length measuring SEM.
Public/Granted literature
- US07366620B2 Evaluation method of fine pattern feature, its equipment, and method of semiconductor device fabrication Public/Granted day:2008-04-29
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