发明申请
- 专利标题: DEFECT DIAGNOSIS FOR SEMICONDUCTOR INTEGRATED CIRCUITS
- 专利标题(中): 半导体集成电路缺陷诊断
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申请号: US10710879申请日: 2004-08-10
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公开(公告)号: US20060036975A1公开(公告)日: 2006-02-16
- 发明人: James Adkisson , Greg Bazan , John Cohn , Francis Gravel , Leendert Huisman , Phillip Nigh , Leah Pastel , Kenneth Rowe , Thomas Sopchak , David Sweenor
- 申请人: James Adkisson , Greg Bazan , John Cohn , Francis Gravel , Leendert Huisman , Phillip Nigh , Leah Pastel , Kenneth Rowe , Thomas Sopchak , David Sweenor
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: G06F17/50
- IPC分类号: G06F17/50
摘要:
A method for defect diagnosis of semiconductor chip. The method comprises the steps of (a) identifying M design structures and N physical characteristics of the circuit design, wherein M and N are positive integers, wherein each design structure of the M design structures is testable as to pass or fail, and wherein each physical characteristic of the N physical characteristics is present in at least one design structure of the M design structures; (b) for each design structure of the M design structures of the circuit design, determining a fail rate and determining whether the fail rate is high or low; and (c) if every design structure of the M design structures in which a physical characteristic of the N physical characteristics is present has a high fail rate, then flagging the physical characteristic as being likely to contain at least a defect.
公开/授权文献
- US07089514B2 Defect diagnosis for semiconductor integrated circuits 公开/授权日:2006-08-08
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