发明申请
- 专利标题: Plasma processing apparatus and method
- 专利标题(中): 等离子体处理装置及方法
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申请号: US11156561申请日: 2005-06-21
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公开(公告)号: US20060037703A1公开(公告)日: 2006-02-23
- 发明人: Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
- 申请人: Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
- 申请人地址: JP Tokyo 107-8481
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人地址: JP Tokyo 107-8481
- 优先权: JP2004-183093 20040621; JP2005-013912 20050121; JP2005-045095 20050222
- 主分类号: C23F1/00
- IPC分类号: C23F1/00
摘要:
An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.
公开/授权文献
- US07951262B2 Plasma processing apparatus and method 公开/授权日:2011-05-31