发明申请
- 专利标题: Infrared sensor device and its manufacturing method
- 专利标题(中): 红外传感器及其制造方法
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申请号: US11190957申请日: 2005-07-28
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公开(公告)号: US20060038129A1公开(公告)日: 2006-02-23
- 发明人: Kazuaki Watanabe
- 申请人: Kazuaki Watanabe
- 专利权人: DENSO CORPORATION
- 当前专利权人: DENSO CORPORATION
- 优先权: JP2004-227827 20040804
- 主分类号: G01J5/00
- IPC分类号: G01J5/00
摘要:
An infrared sensor device includes an infrared sensor element in which a membrane is formed on a surface side of a substrate by forming a concave portion on a rear face side of the substrate, and electrodes for detection are arranged on the surface side of the substrate, and an infrared ray absorbing film for absorbing the energy of an infrared ray by receiving the infrared ray is arranged at the membrane on the rear face side of said substrate. The substrate is electrically connected to a circuit substrate through a bump in a state in which the surface side of the substrate is opposed to the circuit substrate.
公开/授权文献
- US07208736B2 Infrared sensor device and its manufacturing method 公开/授权日:2007-04-24