发明申请
- 专利标题： Deposition method of TiN film having a multi-layer structure
- 专利标题（中）： 具有多层结构的TiN膜的沉积方法
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申请号： US11205990申请日： 2005-08-17
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公开(公告)号： US20060040495A1公开(公告)日： 2006-02-23
- 发明人: Young Park , Sahng Lee , Tae Seo
- 申请人： Young Park , Sahng Lee , Tae Seo
- 优先权： KR10-2004-0065300 20040819
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
Provided is a method of depositing a metal nitride film having a multilayer structure and different deposition speeds on a substrate. The method is performed by forming a first lower metal nitride film on the substrate at a first deposition speed, forming a second lower metal nitride film on the first lower metal nitride film at a second deposition speed, and forming an upper metal nitride film having a large content of nitrogen (N) on a lower TiN film which is formed by the forming of the first lower metal nitride film and the second lower metal nitride film, at a third deposition speed, to improve stability with respect to exposure to air/moisture. The deposition speed of the metal nitride film having a multi-layer structure satisfies a relationship that the second deposition speed ≧the first deposition speed ≧the third deposition speed.