发明申请
- 专利标题: HIGH VOLTAGE TOLERANCE OUTPUT STAGE
- 专利标题(中): 高电压公差输出级
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申请号: US11162001申请日: 2005-08-25
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公开(公告)号: US20060044015A1公开(公告)日: 2006-03-02
- 发明人: Chao-Cheng Lee , Yung-Hao Lin , Wen-Chi Wang , Jui-Yuan Tsai
- 申请人: Chao-Cheng Lee , Yung-Hao Lin , Wen-Chi Wang , Jui-Yuan Tsai
- 优先权: TW093125510 20040826
- 主分类号: H03K19/0175
- IPC分类号: H03K19/0175
摘要:
An output stage structure includes first and second PMOS transistors and first and second NMOS transistors, wherein the MOS transistors are manufactured with a twin well process. The first PMOS transistor has a source coupled to a supply voltage (VDD), and a gate coupled to the first voltage. The second PMOS transistor has a source coupled to a drain of the first PMOS transistor, a gate coupled to the second voltage, and a drain coupled to an output pad. The first NMOS transistor has a drain coupled to the output pad, and a gate coupled to the third voltage. The second NMOS transistor has a drain coupled to source of the first NMOS transistor, a gate coupled to the fourth voltage, and a source coupled to ground.
公开/授权文献
- US07279931B2 High voltage tolerance output stage 公开/授权日:2007-10-09
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