发明申请
- 专利标题： Programming circuits and methods for multimode non-volatile memory devices
- 专利标题（中）： 多模非易失性存储器件的编程电路和方法
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申请号： US11020517申请日： 2004-12-22
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公开(公告)号： US20060044923A1公开(公告)日： 2006-03-02
- 发明人: Wook-Ghee Hahn , Sung-Soo Lee , Dae-Seok Byeon
- 申请人： Wook-Ghee Hahn , Sung-Soo Lee , Dae-Seok Byeon
- 优先权： KR2004-0069926 20040902
- 主分类号： G11C8/00
- IPC分类号： G11C8/00
摘要：
A non-volatile memory device includes non-volatile memory cells, a respective one of which is configured to store a single bit in a single bit mode, and to store more than one bit in a multi-bit mode. A single voltage divider is configured to generate at a least a first program voltage for the non-volatile memory cells in the single bit mode, and to generate at least a second program voltage that is different from the first program voltage, for the non-volatile memory cells in the multi-bit mode.