发明申请
- 专利标题： Manufacturing method of stack-type semiconductor device
- 专利标题（中）： 堆叠型半导体器件的制造方法
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申请号： US11235354申请日： 2005-09-27
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公开(公告)号： US20060046436A1公开(公告)日： 2006-03-02
- 发明人: Shinji Ohuchi , Yasushi Shiraishi , Yasuo Tanaka
- 申请人： Shinji Ohuchi , Yasushi Shiraishi , Yasuo Tanaka
- 优先权： JPJP2000-274813 20000911
- 主分类号： H01L21/78
- IPC分类号： H01L21/78 ; H01L21/44 ; H01L21/50
摘要：
A manufacturing method of a semiconductor device capable of mounting semiconductor elements having different functions without increasing the area of the semiconductor device, wherein a part of a wiring is formed at the side surface of a semiconductor element, and bump electrodes are formed so as to be nearly on a same plane as the wiring formed at the side surface of the semiconductor element. At least a part of ball electrodes are formed so as to connect electrically to the wiring at the side surface of the semiconductor element, the side surface of the semiconductor element is sealed with resin exposing the wiring, and the confronting surface of the circuit forming surface is sealed with resin.
公开/授权文献
- US07405138B2 Manufacturing method of stack-type semiconductor device 公开/授权日：2008-07-29