- 专利标题： Methods of forming layers comprising epitaxial silicon
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申请号： US10932151申请日： 2004-09-01
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公开(公告)号： US20060046440A1公开(公告)日： 2006-03-02
- 发明人: Nirmal Ramaswamy , Gurtej Sandhu , Chris Carlson , F. Gealy
- 申请人： Nirmal Ramaswamy , Gurtej Sandhu , Chris Carlson , F. Gealy
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
The invention includes methods of forming layers comprising epitaxial silicon. In one implementation, an opening is formed within a first material received over a monocrystalline material. Opposing sidewalls of the opening are lined with a second material, with monocrystalline material being exposed at a base of the second material-lined opening. A silicon-comprising layer is epitaxially grown from the exposed monocrystalline material within the second material-lined opening. At least a portion of the second material lining is in situ removed. Other aspects and implementations are contemplated.
公开/授权文献
- US08673706B2 Methods of forming layers comprising epitaxial silicon 公开/授权日：2014-03-18
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