- 专利标题: Semiconductor chip stack structure and method for forming the same
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申请号: US11261156申请日: 2005-10-27
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公开(公告)号: US20060049528A1公开(公告)日: 2006-03-09
- 发明人: In-Ku Kang , Sang-Ho Ahn , Sun-Mo Yang
- 申请人: In-Ku Kang , Sang-Ho Ahn , Sun-Mo Yang
- 申请人地址: KR Suwon-Si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-Si
- 优先权: KR2002-15329 20020321
- 主分类号: H01L23/52
- IPC分类号: H01L23/52
摘要:
Semiconductor chip stack structure and method are provided. A first chip has a first metal bump formed on a first electrode pad. The first chip is attached to and electrically connected to a substrate. The electrical connection is made by a bump reverse bonding method in which one end of a bonding wire is ball-bonded to the substrate and the other end is stitch-bonded to the metal bump. The second chip is stacked on the first chip. The bonding wire is substantially parallel with a top surface of the first chip. Accordingly, the chip stack structure and method minimize a space between the first chip and the second chip, thereby reducing the total height of semiconductor chip stack.
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