- 专利标题： Metal-insulator-metal capacitor and method for manufacturing the same
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申请号： US11265574申请日： 2005-11-02
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公开(公告)号： US20060054995A1公开(公告)日： 2006-03-16
- 发明人: Sang-Hoon Park
- 申请人： Sang-Hoon Park
- 优先权： KR2003-14675 20030310
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; H01L29/94
摘要：
A capacitor has a lower electrode formed on an insulation layer, a dielectric layer formed on the lower electrode, an upper electrode layer formed on the dielectric layer, and a first protection layer pattern formed on the upper electrode layer. The upper electrode layer is etched using the first protection layer pattern to form an upper electrode. A second protection layer is formed enclosing the dielectric layer, the upper electrode and the first protection layer pattern.