发明申请
US20060055461A1 Gain control scheme independent of process, voltage and temperature
有权
增益控制方案独立于过程，电压和温度
- 专利标题： Gain control scheme independent of process, voltage and temperature
- 专利标题（中）： 增益控制方案独立于过程，电压和温度
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申请号： US11167359申请日： 2005-06-27
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公开(公告)号： US20060055461A1公开(公告)日： 2006-03-16
- 发明人: C. Lee , Arya Behzad
- 申请人： C. Lee , Arya Behzad
- 主分类号： H03F3/45
- IPC分类号： H03F3/45
摘要：
An apparatus and method to use a shunt network across source terminals of cascode transistors that drive a differential current to control gain. When the gates of the cascode transistors and transistors of the shunt network are activated by a same bias voltage, the gain control is substantially independent of process, voltage and temperature variations.