Invention Application
- Patent Title: Method for producing an extended memory array and apparatus
- Patent Title (中): 扩展存储器阵列和装置的制造方法
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Application No.: US11008586Application Date: 2004-12-09
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Publication No.: US20060056261A1Publication Date: 2006-03-16
- Inventor: Sebastien Zink , Paola Cavaleri , Bruno Leconte , Jean Devin , Francois Maugain
- Applicant: Sebastien Zink , Paola Cavaleri , Bruno Leconte , Jean Devin , Francois Maugain
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics SA
- Current Assignee: STMicroelectronics SA
- Current Assignee Address: FR Montrouge
- Priority: FR0314621 20031212; FR0314628 20031212; FR0314622 20031212
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
The present invention relates to a memory on a silicon microchip, comprising a serial input/output and an integrated memory array addressable under N bits. According to the present invention, the memory comprises means for storing a most significant address allocated to the memory within an extended memory array addressable with an extended address of N+K bits, an extended address counter for storing an extended address received at the serial input/output of the memory, the extended address comprising N least significant bits that are applied to the integrated memory array, and K most significant bits, means for comparing the K most significant bits with the most significant address allocated to the memory, and means for preventing the execution of a command for reading or writing the integrated memory array if the K most significant address bits are different to the most significant address allocated to the memory. In one embodiment, a ready/busy pad is provided that is taken to a selected potential to prevent access to the memory.
Public/Granted literature
- US07330381B2 Method and apparatus for a continuous read command in an extended memory array Public/Granted day:2008-02-12
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