• Patent Title: Method for manufacturing selective area grown stacked-layer electro-absorption modulated laser structure
  • Application No.: US11215637
    Application Date: 2005-08-30
  • Publication No.: US20060056755A1
    Publication Date: 2006-03-16
  • Inventor: Hongliang ZhuWei Wang
  • Applicant: Hongliang ZhuWei Wang
  • Priority: CN2004100778635 20040916; CN2005100045713 20050118
  • Main IPC: G02F1/295
  • IPC: G02F1/295
Method for manufacturing selective area grown stacked-layer electro-absorption modulated laser structure
Abstract:
This invention relates to a method for manufacturing selective area grown stacked-layer electro-absorption modulated laser structure, comprising: step 1: forming a selective growth pattern of a modulator section on a substrate; step 2: simultaneously growing a 2-stacked-layer active region structure of a modulator MQW layer and a laser MQW layer by the first epitaxy step; step 3: etching gratings, and removing the laser MQW layer in the modulator section by selective etching; and step 4: completing the growth of the entire electro-absorption modulated laser structure by a second epitaxy step.
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