Invention Application
- Patent Title: Method for manufacturing selective area grown stacked-layer electro-absorption modulated laser structure
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Application No.: US11215637Application Date: 2005-08-30
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Publication No.: US20060056755A1Publication Date: 2006-03-16
- Inventor: Hongliang Zhu , Wei Wang
- Applicant: Hongliang Zhu , Wei Wang
- Priority: CN2004100778635 20040916; CN2005100045713 20050118
- Main IPC: G02F1/295
- IPC: G02F1/295

Abstract:
This invention relates to a method for manufacturing selective area grown stacked-layer electro-absorption modulated laser structure, comprising: step 1: forming a selective growth pattern of a modulator section on a substrate; step 2: simultaneously growing a 2-stacked-layer active region structure of a modulator MQW layer and a laser MQW layer by the first epitaxy step; step 3: etching gratings, and removing the laser MQW layer in the modulator section by selective etching; and step 4: completing the growth of the entire electro-absorption modulated laser structure by a second epitaxy step.
Public/Granted literature
- US07476558B2 Method for manufacturing selective area grown stacked-layer electro-absorption modulated laser structure Public/Granted day:2009-01-13
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