发明申请
- 专利标题: Binary OPC for assist feature layout optimization
- 专利标题(中): 二进制OPC用于辅助功能布局优化
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申请号: US11251981申请日: 2005-10-17
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公开(公告)号: US20060057475A1公开(公告)日: 2006-03-16
- 发明人: Lars Liebmann , Richard Ferguson , Allen Gabor , Mark Lavin
- 申请人: Lars Liebmann , Richard Ferguson , Allen Gabor , Mark Lavin
- 主分类号: G03C5/00
- IPC分类号: G03C5/00 ; G03F1/00
摘要:
A method of forming a photolithographic mask layout with Sub-Resolution Assist Feature (SRAF) elements on a mask for correcting for proximity effects for a pattern imaged comprising the steps of developing a layout of mask features for printing main pattern features. Provide a table of SRAF element data including spacing of main pattern features and SRAF elements, applying SRAF elements to the mask layout as a function of spacing of main pattern features and SRAF elements, legalizing the SRAF elements as a function of style options, and providing a target pattern comprising a modified layout for the mask, identifying problem edge segments of an SRAF element of the target pattern at risk of causing a printing defect, applying a selected bias to the problem edge segments to modify the pattern where there are areas of SRAF element loss, and providing an output of a modified pattern with modified SRAF elements removing the areas of SRAF element loss. The system can provide SRAF elements to the mask layout as a function of spacing of main pattern features and SRAF elements may be based on data from the SRAF table; or the system can applying model based OPC for exposure dose values based on data from the SRAF table.
公开/授权文献
- US07147976B2 Binary OPC for assist feature layout optimization 公开/授权日:2006-12-12