发明申请
US20060057811A1 Selective post-doping of gate structures by means of selective oxide growth
失效
通过选择性氧化物生长选择性地掺杂栅极结构
- 专利标题: Selective post-doping of gate structures by means of selective oxide growth
- 专利标题(中): 通过选择性氧化物生长选择性地掺杂栅极结构
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申请号: US11268100申请日: 2005-11-07
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公开(公告)号: US20060057811A1公开(公告)日: 2006-03-16
- 发明人: Anthony Chou , Toshiharu Furukawa , Steven Holmes
- 申请人: Anthony Chou , Toshiharu Furukawa , Steven Holmes
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L21/3205
摘要:
A method for doping a polysilicon gate conductor, without implanting the substrate in a manner that would effect source/drain formation is provided. The inventive method comprises forming at least one polysilicon gate region atop a substrate; forming oxide seed spacers abutting the polysilicon gate; forming source/drain oxide spacers selectively deposited on the oxide seed spacers by liquid phase deposition, and implanting at least one polysilicon gate region, wherein the source/drain oxide spacers protect an underlying portion of the substrate. Multiple gate regions may be processed on a single substrate using conventional patterning. A block-mask provided by patterned photoresist can be used prior to implantation to pre-select the substrate area for gate conductor doping with one dopant type.