Invention Application
US20060057944A1 CHEMICAL MECHANICAL POLISHING PROCESS 有权
化学机械抛光工艺

CHEMICAL MECHANICAL POLISHING PROCESS
Abstract:
A high throughput chemical mechanical polishing process is disclosed. A substrate having thereon a top bulk metal layer and a lower barrier layer is prepared. The top bulk metal layer is polished at a substantial constant removal rate to expose the barrier layer by utilizing a first platen and first slurry being selective to the barrier layer. The exposed barrier layer is then polished by using a second platen and second slurry. The first slurry has a copper to barrier polishing selectivity of greater than 30.
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