Invention Application
- Patent Title: CHEMICAL MECHANICAL POLISHING PROCESS
- Patent Title (中): 化学机械抛光工艺
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Application No.: US10711392Application Date: 2004-09-16
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Publication No.: US20060057944A1Publication Date: 2006-03-16
- Inventor: Chia-Lin Hsu , Teng-Chun Tsai
- Applicant: Chia-Lin Hsu , Teng-Chun Tsai
- Main IPC: B24B1/00
- IPC: B24B1/00

Abstract:
A high throughput chemical mechanical polishing process is disclosed. A substrate having thereon a top bulk metal layer and a lower barrier layer is prepared. The top bulk metal layer is polished at a substantial constant removal rate to expose the barrier layer by utilizing a first platen and first slurry being selective to the barrier layer. The exposed barrier layer is then polished by using a second platen and second slurry. The first slurry has a copper to barrier polishing selectivity of greater than 30.
Public/Granted literature
- US07025661B2 Chemical mechanical polishing process Public/Granted day:2006-04-11
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