- 专利标题: Semiconductor memory device and power line arrangement method thereof
-
申请号: US11229257申请日: 2005-09-16
-
公开(公告)号: US20060060986A1公开(公告)日: 2006-03-23
- 发明人: Sung-Hoon Kim , Young-Chul Cho , Kwang-Il Park , Seong-Jin Jang
- 申请人: Sung-Hoon Kim , Young-Chul Cho , Kwang-Il Park , Seong-Jin Jang
- 优先权: KR2004-75233 20040920
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L23/52
摘要:
A semiconductor memory device and a power line arrangement method are disclosed. The semiconductor memory device includes a plurality of pads, each pad including an upper pad and a lower pad arranged below the upper pad, wherein pad power lines are arranged below the lower pads of the plurality of pads in a direction of crossing the pads to interconnect the pads that transmit the same level of electrical power among the plurality of pads.