发明申请
- 专利标题： Transistor with high dielectric constant gate and method for forming the same
- 专利标题（中）： 具有高介电常数栅极的晶体管及其形成方法
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申请号： US10946494申请日： 2004-09-21
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公开(公告)号： US20060063322A1公开(公告)日： 2006-03-23
- 发明人: Ju-Wang Hsu , Jyu-Horng Shieh , Ju-Chien Chiang
- 申请人： Ju-Wang Hsu , Jyu-Horng Shieh , Ju-Chien Chiang
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L21/302
摘要：
A semiconductor device provides a gate structure that includes a conductive portion and a high-k dielectric material formed beneath and along sides of the conductive material. An additional gate dielectric material such as a gate oxide may be used in addition to the high-k dielectric material. The method for forming the structure includes forming an opening in an organic material, forming the high-k dielectric material and a conductive material within the opening and over the organic material then using chemical mechanical polishing to remove the high-k dielectric material and conductive material from regions outside the gate region.
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