发明申请
- 专利标题： Process for manufacturing wafers of semiconductor material by layer transfer
- 专利标题（中）： 通过层转移制造半导体材料的晶片的工艺
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申请号： US11225883申请日： 2005-09-13
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公开(公告)号： US20060063352A1公开(公告)日： 2006-03-23
- 发明人: Gabriele Barlocchi , Flavio Villa
- 申请人： Gabriele Barlocchi , Flavio Villa
- 申请人地址： IT Agrate Brianza
- 专利权人： STMicroelectronics S.r.I
- 当前专利权人： STMicroelectronics S.r.I
- 当前专利权人地址： IT Agrate Brianza
- 优先权： EP04425687.3 20040916
- 主分类号： H01L21/30
- IPC分类号： H01L21/30 ; H01L21/20
摘要：
A process manufactures a wafer using semiconductor processing techniques. A bonding layer is formed on a top surface of a first wafer; a deep trench is dug in a substrate of semiconductor material belonging to a second wafer. A top layer of semiconductor material is formed on top of the substrate so as to close the deep trench at the top and form at least one buried cavity. The top layer of the second wafer is bonded to the first wafer through the bonding layer. The two wafers are subjected to a thermal treatment that causes bonding of at least one portion of the top layer to the first wafer and widening of the buried cavity. In this way, the portion of the top layer bonded to the first wafer is separated from the rest of the second wafer, to form a composite wafer.
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