• 专利标题: Base current compensation circuit for a bipolar junction transistor
  • 申请号: US10953897
    申请日: 2004-09-29
  • 公开(公告)号: US20060066408A1
    公开(公告)日: 2006-03-30
  • 发明人: Hao FangCameron Rabe
  • 申请人: Hao FangCameron Rabe
  • 主分类号: H03F3/04
  • IPC分类号: H03F3/04
Base current compensation circuit for a bipolar junction transistor
摘要:
A method and apparatus for compensating a base current of a bipolar junction transistor by replicating operating conditions of the BJT in a compensating circuit. An output current of the compensating circuit is fractionally related to the base current and thus can be supplied to an operational circuit comprising the BJT to compensate the base current. In a preferred embodiment, the BJT is operated between BVCEO and BVCBO and the base current to be compensated flows from the BJT.
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