发明申请
US20060068555A1 Structure and method for manufacturing MOSFET with super-steep retrograded island
失效
具有超陡退化岛的MOSFET的制造和制造方法
- 专利标题: Structure and method for manufacturing MOSFET with super-steep retrograded island
- 专利标题(中): 具有超陡退化岛的MOSFET的制造和制造方法
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申请号: US10954838申请日: 2004-09-30
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公开(公告)号: US20060068555A1公开(公告)日: 2006-03-30
- 发明人: Huilong Zhu , Effendi Leobandung , Anda Mocuta , Dan Mocuta
- 申请人: Huilong Zhu , Effendi Leobandung , Anda Mocuta , Dan Mocuta
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
The present invention comprises a method for forming a semiconducting device including the steps of providing a layered structure including a substrate, a low diffusivity layer of a first-conductivity dopant; and a channel layer; forming a gate stack atop a protected surface of the channel layer; etching the layered structure selective to the gate stack to expose a surface of the substrate, where a remaining portion of the low diffusivity layer provides a retrograded island substantially aligned to the gate stack having a first dopant concentration to reduce short-channel effects without increasing leakage; growing a Si-containing material atop the recessed surface of the substrate; and doping the Si-containing material with a second-conductivity dopant at a second dopant concentration. The low diffusivity layer may be Si1-x-yGexZy, where Z can be carbon (C), xenon (Xe), germanium (Ge), krypton (Kr), argon (Ar), nitrogen (N), or combinations thereof.