发明申请
US20060068587A1 Copper alloy for semiconductor interconnections, fabrication method thereof, semiconductor device having copper alloy interconnections fabricated by the method, and sputtering target for fabricating copper alloy interconnections for semiconductors
有权
用于半导体互连的铜合金，其制造方法，通过该方法制造的具有铜合金互连的半导体器件，以及用于制造用于半导体的铜合金互连的溅射靶
- 专利标题： Copper alloy for semiconductor interconnections, fabrication method thereof, semiconductor device having copper alloy interconnections fabricated by the method, and sputtering target for fabricating copper alloy interconnections for semiconductors
- 专利标题（中）： 用于半导体互连的铜合金，其制造方法，通过该方法制造的具有铜合金互连的半导体器件，以及用于制造用于半导体的铜合金互连的溅射靶
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申请号： US11229721申请日： 2005-09-20
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公开(公告)号： US20060068587A1公开(公告)日： 2006-03-30
- 发明人: Masao Mizuno , Takashi Onishi
- 申请人： Masao Mizuno , Takashi Onishi
- 申请人地址： JP Kobe-shi
- 专利权人： Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd)
- 当前专利权人： Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd)
- 当前专利权人地址： JP Kobe-shi
- 优先权： JP2004-280444 20040927
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A Cu alloy for semiconductor interconnections contains at least one selected from the group consisting of 0.10 to 10 atomic percent of Sb, 0.010 to 1.0 atomic percent of Bi, and 0.01 to 3 atomic percent of Dy, with the balance being Cu and inevitable impurities. The Cu alloy can be reliably embedded in narrow trenches and/or via holes for interconnections.
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