发明申请
- 专利标题： Solid state image pickup apparatus and radiation image pickup apparatus
- 专利标题（中）： 固态摄像装置和放射线摄像装置
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申请号： US10538774申请日： 2004-02-10
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公开(公告)号： US20060071251A1公开(公告)日： 2006-04-06
- 发明人: Minoru Watanabe , Masakazu Morishita , Chiori Mochizuki , Takamasa Ishii , Keiichi Nomura
- 申请人： Minoru Watanabe , Masakazu Morishita , Chiori Mochizuki , Takamasa Ishii , Keiichi Nomura
- 申请人地址： JP TOKYO
- 专利权人： CANON KABUSHIKI KAISHA
- 当前专利权人： CANON KABUSHIKI KAISHA
- 当前专利权人地址： JP TOKYO
- 国际申请： PCT/JP04/01431 WO 20040210
- 主分类号： H01L31/113
- IPC分类号： H01L31/113
摘要：
In a solid state image pickup apparatus with a photodetecting device and one or more thin film transistors connected to the photodetecting device formed in one pixel, a part of the photodetecting device is formed over at least a part of the thin film transistor, and the thin film transistor is constructed by a source electrode, a drain electrode, a first gate electrode, and a second gate electrode arranged on the side opposite to the first gate electrode with respect to the source electrode and the drain electrode, and the first gate electrode is connected to the second gate electrode every pixel, thereby, suppressing an adverse effect of the photodetecting device on the TFT, a leakage at turn-off TFT, variation in a threshold voltage of the TFT due to an external electric field, and accurately transferring photo carrier to a signal processing circuit.
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