A ferroelectric memory cell has a semiconductor substrate of a first conductivity type having a first region and a second region with each being of a second conductivity type, with a channel region therebetween. The first region and the second region are aligned in a first direction. A gate dielectric is over at least a portion of the channel region. A gate is over the gate dielectric, with the gate extending in a direction transverse to the first direction termination at a termination point not overlapping the first region, the second region and the channel region. A ferroelectric capacitor is at the termination point. The ferroelectric capacitor has a first end and a second end with the first end connected to the gate. The ferroelectric memory cell has three terminals: the first region, the second region, and the second end. In another embodiment, an insulator is over at least a portion of the first region. The gate has one end over the gate dielectric and extends over the insulator terminating at a termination point. A ferroelectric capacitor is connected to the termination point, which lies over a portion of the first region.