发明申请
- 专利标题: Integrated circuit testing methods using well bias modification
- 专利标题(中): 集成电路测试方法采用偏置修正
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申请号: US10539247申请日: 2003-02-20
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公开(公告)号: US20060071653A1公开(公告)日: 2006-04-06
- 发明人: Anne Gattiker , David Grosch , Marc Knox , Franco Motika , Phil Nigh , Jody Van Horn , Paul Zuchowski
- 申请人: Anne Gattiker , David Grosch , Marc Knox , Franco Motika , Phil Nigh , Jody Van Horn , Paul Zuchowski
- 国际申请: PCT/US03/05314 WO 20030220
- 主分类号: G01R19/00
- IPC分类号: G01R19/00
摘要:
Methods for testing a semiconductor circuit (10) including testing the circuit and modifying a well bias (14, 18) of the circuit during testing. The methods improve the resolution of voltage-based and IDDQ testing and diagnosis by modifying well bias during testing. In addition, the methods provide more efficient stresses during stress testing. The methods apply to ICs where the semiconductor well (wells and/or substrates) are wired separately from the chip VDD and GND, allowing for external control (40) of the well potentials during test. In general, the methods rely on using the well bias to change transistor threshold voltages.
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