发明申请
- 专利标题: Methods of manufacturing a semiconductor device
- 专利标题(中): 制造半导体器件的方法
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申请号: US11240048申请日: 2005-09-30
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公开(公告)号: US20060073691A1公开(公告)日: 2006-04-06
- 发明人: Joo-Byoung Yoon , Jin-Sung Kim , Kyung-Woo Lee , Yeong-Cheol Lee , Sang-Jun Park , Hwan-Shik Park
- 申请人: Joo-Byoung Yoon , Jin-Sung Kim , Kyung-Woo Lee , Yeong-Cheol Lee , Sang-Jun Park , Hwan-Shik Park
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR2004-78597 20041004
- 主分类号: H01L21/44
- IPC分类号: H01L21/44
摘要:
In a method of manufacturing a semiconductor device including a capacitor, a first mold layer is formed on a semiconductor substrate. The first mold layer is partially etched to form a first mold layer pattern including an opening for a capacitor. A first lower electrode layer is formed on the first mold layer pattern. A second lower electrode layer including a plurality of first pores is formed on the first lower electrode layer and in the opening. Upper portions of the first lower electrode layer and the second lower electrode layer are removed to form a first lower electrode and a second lower electrode in the opening. A dielectric layer and an upper electrode are successively formed on the first lower electrode and the second lower electrode. Therefore, a capacitor having an enhanced capacitance may be obtained.
公开/授权文献
- US07375003B2 Methods of manufacturing a semiconductor device 公开/授权日:2008-05-20