发明申请
- 专利标题： High electron mobility transistors with Sb-based channels
- 专利标题（中）： 具有Sb基通道的高电子迁移率晶体管
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申请号： US11239431申请日： 2005-09-20
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公开(公告)号： US20060076577A1公开(公告)日： 2006-04-13
- 发明人: John Boos , Brian Bennett , Richard Magno , Brad Tinkham , Nicholas Papanicolou
- 申请人： John Boos , Brian Bennett , Richard Magno , Brad Tinkham , Nicholas Papanicolou
- 主分类号： H01L29/739
- IPC分类号： H01L29/739
摘要：
This invention pertains to an electronic device containing a semi-insulating substrate, a buffer layer of an antimony-based material disposed on said substrate, a channel layer of InAsySb1−y material disposed on said buffer layer, a barrier layer of an antimony-based disposed on said channel layer, and a cap layer of InAsySb1−y material disposed on said barrier layer, wherein the device can have frequency of on the order of 500 GHz and a reduced power dissipation.
公开/授权文献
- US07388235B2 High electron mobility transistors with Sb-based channels 公开/授权日：2008-06-17
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